Materials growth

Materials growth within the CMOS++ cluster at Tyndall National Institute falls into three main categories of vapour phase deposition methodology, metalorganic vapour phase epitaxy (MOVPE), chemical vapour deposition (CVD) and atomic layer deposition (ALD). Each of these techniques has its own unique advantages and disadvantages allowing a suitable process to be selected across a wide spectrum of device needs. For the epitaxial growth of III-V semiconductors MOVPE is the method of choice, enabling the production of high-quality films and innovative site-controlled quantum dots. Chemical vapour deposition, the more generic vapour phase process, is used at Tyndall to grow metal oxide structures, both crystalline lattice matched and poly crystalline materials, ALD is employed where conformality and ultra-thin films are required.