Dr. Lida Ansari – neuqu.ie

Biography

Dr Ansari is a staff researcher at the Micro-Nano Systems (MNS) Centre, Tyndall National Institute, University College Cork (UCC), Ireland. She has received her PhD in Microelectronics from Tyndall, UCC in 2013 and awarded best PhD student BOC bursary for her PhD research work in 2012. Her doctoral research work was focused on atomic-scale simulation of nanoelectronic devices. He was then awarded Irish Research Council (IRC) fellowship on developing semimetal-based nanosensors.

Dr Ansari was on the Technical Program Committee and one of the local organisers of the IEEE NANO conference held at UCC in July 2018.

Dr. Ansari’s activities involve Emerging Materials and Devices for future nanoelectronic, ICT and spintronics applications, including simulation of emerging device concepts. Dr Ansari’s research focus is on addressing key technological challenges that are essential to the future evolution of Integrated Circuits (ICs) beyond Moore’s Law, needed for the future Trillion Sensor economy of the Internet of Things (IoT), and smart systems/cities. She has gained a wealth of experience in nano-scale material simulations and design of electronic devices through collaborative projects with industry, and by delivering industry-level, high-standard and high-impact research. In particular, her research interest is low dimensional semiconductors and semimetals for beyond classical CMOS integration, surface effects in nanowires and other low-dimensional systems, atomic scale models for nanowire transistors and emerging device concepts.

Dr Ansari has had collaborative research projects or technical engagements with international industrial multinationals, including Intel and TSMC. She is the lead inventor of a US patent (US 10658460 B2) and an invention disclosure on “semimetal-based devices”.

Over the past 10 years she has been a technical reviewer for peer-reviewed journals including ACS Applied Materials and Interfaces, IEEE Transactions on Electron Devices, Applied Physics Letters, and Journal of Applied Physics among others.

Her role involves:
– project management,
– budget management and purchasing,
– PhD student supervision and mentoring,
– dissemination of results in peer-reviewed articles.
‍

Research Interests

Dr. Ansari’s activities involve Emerging Materials and Devices for future nanoelectronic, ICT and spintronics applications, including simulation of emerging device concepts. Dr Ansari’s research focus is on addressing key technological challenges that are essential to the future evolution of Integrated Circuits (ICs) beyond Moore’s Law, needed for the future Trillion Sensor economy of the Internet of Things (IoT), and smart systems/cities.

In particular, her research interest is low dimensional semiconductors and semimetals for beyond classical CMOS integration, surface effects in nanowires and other low-dimensional systems, atomic scale models for nanowire transistors and emerging device concepts in nanoelectronics, photonics and spintronics.

Research Grants

Publications

Bhattacharjee, S., Caruso, E., McEvoy, N., Ó Coileáin, C., O’Neill, K., Ansari, L., Duesberg, G.S., Nagle, R., Cherkaoui, K., Gity, F., Hurley, P.K.. Insights into Multilevel Resistive Switching in Monolayer MoS2, (2020) ACS Applied Materials and Interfaces, 12 (5), pp. 6022-6029. DOI: 10.1021/acsami.9b15677
Ansari, L., Monaghan, S., McEvoy, N., Coileáin, C.Ó., Cullen, C.P., Lin, J., Siris, R., Stimpel-Lindner, T., Burke, K.F., Mirabelli, G., Duffy, R., Caruso, E., Nagle, R.E., Duesberg, G.S., Hurley, P.K., Gity, F., Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C, (2019) npj 2D Materials and Applications, 3 (1), art. no. 33, ., DOI: 10.1038/s41699-019-0116-4
Machale, J., Meaney, F., Kennedy, N., Eaton, L., Mirabelli, G., White, M., Thomas, K., Pelucchi, E., Petersen, D.H., Lin, R., Petkov, N., Connolly, J., Hatem, C., Gity, F., Ansari, L., Long, B., Duffy, R., Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm, (2019) Journal of Applied Physics, 125 (22), art. no. 225709, DOI: 10.1063/1.5098307
Greer, J.C., Blom, A., Ansari, L., Properties of homo- and hetero-Schottky junctions from first principle calculations, (2018) Journal of Physics Condensed Matter, 30 (41), art. no. 414003, DOI: 10.1088/1361-648X/aadbed
Gity, F., Ansari, L., König, C., Verni, G.A., Holmes, J.D., Long, B., Lanius, M., Schüffelgen, P., Mussler, G., Grützmacher, D., Greer, J.C., Metal-semimetal Schottky diode relying on quantum confinement, (2018) Microelectronic Engineering, 195, pp. 21-25., DOI: 10.1016/j.mee.2018.03.022
Gity, F., Ansari, L., Monaghan, S., Mirabelli, G., Torchia, P., Hydes, A., Schmidt, M., Sheehan, B., Mcevoy, N., Hallam, T., Cherkaoui, K., Nagle, R., Duffy, R., Duesberg, G.S., Hurley, P.K., Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experiment, (2018) 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017, 2018-January, pp. 175-176., DOI: 10.1109/NMDC.2017.8350544
Hallam, T., Monaghan, S., Gity, F., Ansari, L., Schmidt, M., Downing, C., Cullen, C.P., Nicolosi, V., Hurley, P.K., Duesberg, G.S., Rhenium-doped MoS2 films, (2017) Applied Physics Letters, 111 (20), art. no. 203101, DOI: 10.1063/1.4995220
Gity, F., Ansari, L., Lanius, M., Schüffelgen, P., Mussler, G., Grützmacher, D., Greer, J.C., Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films, (2017) Applied Physics Letters, 110 (9), art. no. 093111, DOI: 10.1063/1.4977431
Ansari, L., Gity, F., Greer, J.C., Electronic and structural properties of rhombohedral [1 1 1] and [1 1 0] oriented ultra-thin bismuth nanowires, (2017) Journal of Physics Condensed Matter, 29 (6), art. no. 065301, DOI: 10.1088/1361-648X/aa4e63
Ansari, L., Gity, F., Greer, J.C., Atomic-scale simulation of semimetal-to-semiconductor transition in bismuth nanowires for future generation of nanoelectronic devices, (2016) 16th International Conference on Nanotechnology – IEEE NANO 2016, art. no. 7751390, pp. 963-965, DOI: 10.1109/NANO.2016.7751390
Ansari, L., Fagas, G., Gity, F., Greer, J.C., A sub kBT/q semimetal nanowire field effect transistor, (2016) Applied Physics Letters, 109 (6), art. no. 063108, DOI: 10.1063/1.4960709
Ansari, L., Fagas, G., Greer, J.C., Strained semimetallic and semiconducting SnNW, (2015) IEEE-NANO 2015 – 15th International Conference on Nanotechnology, art. no. 7388724, pp. 774-776, DOI:10.1109/NANO.2015.7388724
Ansari, L., Fagas, G., Greer, J.C., Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires, (2014) Applied Physics Letters, 105 (12), art. no. 123105, DOI: 10.1063/1.4896293
Ansari, L., Feldman, B., Fagas, G., Lacambra, C.M., Haverty, M.G., Kuhn, K.J., Shankar, S., Greer, J.C., First principle-based analysis of single-walled carbon nanotube and silicon nanowire junctionless transistors, (2013) IEEE Transactions on Nanotechnology, 12 (6), art. no. 6584817, pp. 1075-1081,DOI: 10.1109/TNANO.2013.2279424
Ansari, L., Fagas, G., Greer, J.C., Semi-metal nanowire transistors from first principle calculations, (2013) ECS Transactions, 53 (1), pp. 259-267, DOI: 10.1149/05301.0259ecst
Sharma, D., Ansari, L., Feldman, B., Iakovidis, M., Greer, J.C., Fagas, G., Transport properties and electrical device characteristics with the TiMeS computational platform: Application in silicon nanowires, (2013) Journal of Applied Physics, 113 (20), art. no. 203708, DOI: 10.1063/1.4807578
Ansari, L., Fagas, G., Greer, J.C., Tin nanowire field effect transistor, (2012) European Solid-State Device Research Conference, art. no. 6343391, pp. 294-297, DOI: 10.1109/ESSDERC.2012.6343391
Ansari, L., Fagas, G., Colinge, J.-P., Greer, J.C, A proposed confinement modulated gap nanowire transistor based on a metal (Tin), (2012) Nano Letters, 12 (5), pp. 2222-2227, DOI: 10.1021/nl2040817
Ansari, L., Feldman, B., Fagas, G., Colinge, J.-P., Greer, J.C., Subthreshold behavior of junctionless silicon nanowire transistors from atomic scale simulations ,(2012) Solid-State Electronics, 71, pp. 58-62, DOI: 10.1016/j.sse.2011.10.021
Ansari, L., Feldman, B., Fagas, G., Colinge, J.-P., Greer, J.C., Atomic scale simulation of a junctionless silicon nanowire transistor, (2011) 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011, art. no. 5757976, pp. 96-98, DOI: 10.1109/ULIS.2011.5757976
Ansari, L., Feldman, B., Fagas, G., Colinge, J.-P., Greer, J.C., Simulation of junctionless Si nanowire transistors with 3 nm gate length, (2010) Applied Physics Letters, 97 (6), art. no. 062105, DOI: 10.1063/1.3478012
Gity, F., Ansari, L., Modeling the effects of DLTs and carrier transport on the turn-on delay, steady-state time and wavelength chirp of SCH-QW lasers, (2009) ICICS 2009 – Conference Proceedings of the 7th International Conference on Information, Communications and Signal Processing, art. no. 5397636, DOI: 10.1109/ICICS.2009.5397636
Zarifkar, A., Ansari, L., Moravvej-Farshi, M.K., An equivalent circuit model for analyzing separate confinement heterostructure quantum well laser diodes including chirp and carrier transport effects, (2009) Fiber and Integrated Optics, 28 (4), pp. 249-267, DOI: 10.1080/01468030902833284
Ansari, L., Gity, F., Modeling and numerical analysis of static, dynamic and wavelength chirp characteristics of asymmetric multiple quantum well lasers, (2008) Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers, art. no. 4671854, pp. 236-238, DOI: 10.1109/CAOL.2008.4671854
Gity, F., Moghaddasi, M.N., Ansari, L., Modeling and numerical analysis of temperature variations along the cavity and in the heat sink of a single quantum well high power laser diode, (2008) 2008 International Conference on Laser and Fiber-Optical Networks Modeling, LFNM 2008, art. no. 4670360, pp. 26-28, DOI: 10.1109/LFNM.2008.4670360
Gity, F., Naser Moghaddasi, M., Ansari, L., Modelling and numerical analysis of carrier transport effects on the wavelength chirp of SCH-QW lasers, (2007) 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE, art. no. 4410857, pp. 508-510, DOI: 10.1109/AOE.2007.4410857
Gity, F., Mirzakuchaki, S., Zarifkar, A., Ansari, L., Modeling the effects of deep level traps and carrier transport on the L-I characteristic, transient response and wavelength chirp of SCH-QW lasers, (2007) 4th IEEE and IFIP International Conference on Wireless and Optical Communications Networks, WOCN 2007, art. no. 4284168,DOI:10.1109/WOCN.2007.4284168