Dr. Farzan Gity – neuqu.ie

Biography

Dr Gity is a staff research scientist at Tyndall National Institute, University College Cork (UCC), Ireland. He has received his PhD in Electronics Engineering from Tyndall, UCC in 2013 and awarded best PhD student BOC bursary for his PhD research work, in 2013. He was then awarded Irish Research Council (IRC) fellowship on developing semimetal-based nanoelectronic devices.

Dr Gity was the Principal Investigator (PI) of EU-H2020 SaSHa project at Tyndall (http://www.sashaproject.eu/). In 2017, Dr Gity received Science Foundation Ireland (SFI), Technology Innovation and Development Award (TIDA) focusing on integrating dissimilar materials for novel integrated electronic applications, focusing on understanding of carrier transport through interfacial ultrathin oxide layers. Dr Gity is Ireland’s only delegate in the management committee of EU-COST Action CA17123 on ‘Ultrafast opto-magneto-electronics for non-dissipative information technology (https://www.cost.eu/actions/CA17123/).

In 2019, Dr Gity has been awarded UCC’s Early Stage Researcher of the Year Award.

Dr Gity was on the Technical Program Committee and one of the local organisers of the IEEE NANO conference held at UCC in July 2018.

Dr. Gity’s activities involve Emerging Materials and Devices for future nanoelectronic, ICT and spintronics applications, including fabrication, characterisation and modelling of devices. Dr Gity’s research focus is on addressing key technological challenges that are essential to the future evolution of Integrated Circuits (ICs) beyond Moore’s Law, needed for the future Trillion Sensor economy of the Internet of Things (IoT), and smart systems/cities. He has gained a wealth of experience in nano-scale material analysis, simulations and design, fabrication and characterisation of electronic and photonic devices through collaborative projects with industry, and by delivering industry-level, high-standard and high-impact research.
In particular, his research interest is heterogeneous-integration of low-dimensional materials, e.g., 2D, (poly)crystalline III-V and organic materials for advanced nanoelectronics, photonics and spintronics applications.

He has had collaborative research projects or technical engagements with international industrial multinationals, including Intel and Applied Materials. He is the lead inventor of a US patent application (2015/0303345), one invention disclosure on “semimetal-based devices”, and one on “full wafer low-thermal budget integration of dissimilar materials for back-end-of-line (BEOL) integration”.

Over the past 10 years he has been a technical reviewer for peer-reviewed journals including Nano Energy, ACS Applied Materials and Interfaces, ACS Advanced Electronic Materials, ACS Sensors, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEEE Photonics Technology Letters, Applied Physics Letters, and Journal of Applied Physics among others.

His role involves:
– project management,
– budget management and purchasing,
– PhD student supervision and mentoring,
– dissemination of results in peer-reviewed articles.

Research Interests

Dr. Gity’s activities involve Emerging Materials and Devices for future nanoelectronic, ICT and spintronics applications, including fabrication, characterisation and modelling of devices. Dr Gity’s research focus is on addressing key technological challenges that are essential to the future evolution of Integrated Circuits (ICs) beyond Moore’s Law, needed for the future Trillion Sensor economy of the Internet of Things (IoT), and smart systems/cities.
In particular, Dr Gity’s research interest is heterogeneous-integration of low-dimensional materials, e.g., 2D and (poly)crystalline III-V for advanced nanoelectronics, photonics and spintronics applications.

Research Grants

Publications

Caruso, E., Lin, J., Monaghan, S., Cherkaoui, K., Gity, F., Palestri, P., Esseni, D., Selmi, L., Hurley, P.K., The Role of Oxide Traps Aligned with the Semiconductor Energy Gap in MOS Systems, (2020) IEEE Transactions on Electron Devices, 67 (10), art. no. 9180268, pp. 4372-4378, DOI: 10.1109/TED.2020.3018095
Marquez, C., Salazar, N., Gity, F., Navarro, C., Mirabelli, G., C Galdon, J., Duffy, R., Navarro, S., K Hurley, P., Gamiz, F., Investigating the transient response of Schottky barrier back-gated MoS2 transistors, (2020) 2D Materials, 7 (2), art. no. 025040, DOI: 10.1088/2053-1583/ab7628
Gocalinska, A., Pescaglini, A., Secco, E., Mura, E.E., Thomas, K., Curran, A., Gity, F., Nagle, R., Schmidt, M., Michałowski, P.P., Hurley, P.K., Povey, I., Pelucchi, E., Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- And p-type III–V metalorganic vapour phase epitaxy thin films on amorphous substrates, (2020) JPhys Photonics, 2 (2), art. no. 025003, DOI: 10.1088/2515-7647/ab7557
Bhattacharjee, S., Caruso, E., McEvoy, N., Ó Coileáin, C., O’Neill, K., Ansari, L., Duesberg, G.S., Nagle, R., Cherkaoui, K., Gity, F., Hurley, P.K., Insights into Multilevel Resistive Switching in Monolayer MoS2, (2020) ACS Applied Materials and Interfaces, 12 (5), pp. 6022-6029, DOI: 10.1021/acsami.9b15677
Ansari, L., Monaghan, S., McEvoy, N., Coileáin, C.Ó., Cullen, C.P., Lin, J., Siris, R., Stimpel-Lindner, T., Burke, K.F., Mirabelli, G., Duffy, R., Caruso, E., Nagle, R.E., Duesberg, G.S., Hurley, P.K., Gity, F., Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C, (2019) npj 2D Materials and Applications, 3 (1), art. no. 33, DOI: 10.1038/s41699-019-0116-4
Mirabelli, G., Walsh, L.A., Gity, F., Bhattacharjee, S., Cullen, C.P., Ó Coileáin, C., Monaghan, S., McEvoy, N., Nagle, R., Hurley, P.K., Duffy, R., Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation, (2019) ACS Omega, 4 (17), pp. 17487-17493, DOI: 10.1021/acsomega.9b02291
Caruso, E., Lin, J., Monaghan, S., Cherkaoui, K., Floyd, L., Gity, F., Palestri, P., Esseni, D., Selmi, L., Hurley, P.K., Relationship between capacitance and conductance in MOS capacitors, (2019) International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2019-September, art. no. 8870553, DOI: 10.1109/SISPAD.2019.8870553
Machale, J., Meaney, F., Kennedy, N., Eaton, L., Mirabelli, G., White, M., Thomas, K., Pelucchi, E., Petersen, D.H., Lin, R., Petkov, N., Connolly, J., Hatem, C., Gity, F., Ansari, L., Long, B., Duffy, R., Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm, (2019) Journal of Applied Physics, 125 (22), art. no. 225709, DOI: 10.1063/1.5098307
McManus, J.B., Cunningham, G., McEvoy, N., Cullen, C.P., Gity, F., Schmidt, M., McAteer, D., Mullarkey, D., Shvets, I.V., Hurley, P.K., Hallam, T., Duesberg, G.S., Growth of 1T′ MoTe2 by thermally assisted conversion of electrodeposited tellurium films, (2019) ACS Applied Energy Materials, 2 (1), pp. 521-530, DOI: 10.1021/acsaem.8b01540
Gity, F., Ansari, L., König, C., Verni, G.A., Holmes, J.D., Long, B., Lanius, M., Schüffelgen, P., Mussler, G., Grützmacher, D., Greer, J.C., Metal-semimetal Schottky diode relying on quantum confinement, (2018) Microelectronic Engineering, 195, pp. 21-25, DOI: 10.1016/j.mee.2018.03.022
Caruso, E., Lin, J., Burke, K.F., Cherkaoui, K., Esseni, D., Gity, F., Monaghan, S., Palestra, P., Hurley, P., Selmi, L., Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks, (2018) 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, 2018-January, pp. 1-4, DOI: 10.1109/ULIS.2018.8354757
Gammon, P.M., Chan, C.W., Li, F., Gity, F., Trajkovic, T., Pathirana, V., Flandre, D., Kilchytska, V., Development, characterisation and simulation of wafer bonded Si-on-SiC substrates, (2018) Materials Science in Semiconductor Processing, 78, pp. 69-74, DOI: 10.1016/j.mssp.2017.10.020
Gity, F., Ansari, L., Monaghan, S., Mirabelli, G., Torchia, P., Hydes, A., Schmidt, M., Sheehan, B., Mcevoy, N., Hallam, T., Cherkaoui, K., Nagle, R., Duffy, R., Duesberg, G.S., Hurley, P.K., Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experiment, (2018) 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017, 2018-January, pp. 175-176, DOI: 10.1109/NMDC.2017.8350544
Yim, C., McEvoy, N., Riazimehr, S., Schneider, D.S., Gity, F., Monaghan, S., Hurley, P.K., Lemme, M.C., Duesberg, G.S., Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes, (2018) Nano Letters, 18 (3), pp. 1794-1800, DOI: 10.1021/acs.nanolett.7b05000
O’Dwyer, C., Walsh, L.A., Gity, F., Bhattacharjee, S., Hurley, P.K., Two-dimensional materials and their role in emerging electronic and photonic devices, (2018) Electrochemical Society Interface, 27 (4), pp. 53-58, DOI: 10.1149/2.f06184if
Alessio Verni, G., Long, B., Gity, F., Lanius, M., Schüffelgen, P., Mussler, G., Grützmacher, D., Greer, J., Holmes, J.D., Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers, (2018) RSC Advances, 8 (58), pp. 33368-33373, DOI: 10.1039/C8RA06840B
Hallam, T., Monaghan, S., Gity, F., Ansari, L., Schmidt, M., Downing, C., Cullen, C.P., Nicolosi, V., Hurley, P.K., Duesberg, G.S., Rhenium-doped MoS2 films, (2017) Applied Physics Letters, 111 (20), art. no. 203101, DOI: 10.1063/1.4995220
Mirabelli, G., Gity, F., Monaghan, S., Hurley, P.K., Duffy, R., Impact of impurities, interface traps and contacts on MoS2 MOSFETs: Modelling and experiments, (2017) European Solid-State Device Research Conference, art. no. 8066648, pp. 288-291, DOI: 10.1109/ESSDERC.2017.8066648
Ben Ali, K., Gammon, P.M., Chan, C.W., Li, F., Pathirana, V., Trajkovic, T., Gity, F., Flandre, D., Kilchytska, V., Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications, (2017) European Solid-State Device Research Conference, art. no. 8066635, pp. 236-239, DOI: 10.1109/ESSDERC.2017.8066635
Monaghan, S., Gity, F., Duffy, R., Mirabelli, G., McCarthy, M., Cherkaoui, K., Povey, I.M., Nagle, R.E., Hurley, P.K., Lindemuth, J.R., Napolitani, E., Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals, (2017) Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 – Proceedings, art. no. 7962592, pp. 27-30, DOI: 10.1109/ULIS.2017.7962592
Gammon, P.M., Chan, C.W., Gity, F., Trajkovic, T., Kilchytska, V., Fan, L., Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P.A., Gardner, J.W., Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications, (2017) E3S Web of Conferences, 16, art. no. 12003, DOI: 10.1051/e3sconf/20171612003
Gity, F., Ansari, L., Lanius, M., Schüffelgen, P., Mussler, G., Grützmacher, D., Greer, J.C., Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films, (2017) Applied Physics Letters, 110 (9), art. no. 093111, DOI: 10.1063/1.4977431
Ansari, L., Gity, F., Greer, J.C., Electronic and structural properties of rhombohedral [1 1 1] and [1 1 0] oriented ultra-thin bismuth nanowires, (2017) Journal of Physics Condensed Matter, 29 (6), art. no. 065301, DOI: 10.1088/1361-648X/aa4e63
Gammon, P.M., Li, F., Chan, C.W., Sanchez, A., Hindmarsh, S., Gity, F., Trajkovic, T., Kilchytska, V., Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P.A., Gardner, J.W., The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices, (2017) Materials Science Forum, 897 MSF, pp. 747-750, DOI: 10.4028/www.scientific.net/MSF.897.747
Liu, N., Gocalinska, A., Justice, J., Gity, F., Povey, I., McCarthy, B., Pemble, M., Pelucchi, E., Wei, H., Silien, C., Xu, H., Corbett, B., Lithographically Defined, Room Temperature Low Threshold Subwavelength Red-Emitting Hybrid Plasmonic Lasers, (2016) Nano Letters, 16 (12), pp. 7822-7828, DOI: 10.1021/acs.nanolett.6b04017
Ansari, L., Gity, F., Greer, J.C., Atomic-scale simulation of semimetal-to-semiconductor transition in bismuth nanowires for future generation of nanoelectronic devices
(2016) 16th International Conference on Nanotechnology – IEEE NANO 2016, art. no. 7751390, pp. 963-965, DOI: 10.1109/NANO.2016.7751390
Mirabelli, G., McGeough, C., Schmidt, M., McCarthy, E.K., Monaghan, S., Povey, I.M., McCarthy, M., Gity, F., Nagle, R., Hughes, G., Cafolla, A., Hurley, P.K., Duffy, R., Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2, (2016) Journal of Applied Physics, 120 (12), art. no. 125102, DOI: 10.1063/1.4963290
Ansari, L., Fagas, G., Gity, F., Greer, J.C., A sub kBT/q semimetal nanowire field effect transistor, (2016) Applied Physics Letters, 109 (6), art. no. 063108, DOI: 10.1063/1.4960709
Gardes, C., Justice, J., Gity, F., Yang, H., Corbett, B., Numerical simulations with energy balance model for unitraveling-carrier photodiode, (2015) IEEE-NANO 2015 – 15th International Conference on Nanotechnology, art. no. 7388997, pp. 350-353, DOI: 10.1109/NANO.2015.7388997
Shayesteh, M., Connell, D.O., Gity, F., Murphy-Armando, P., Yu, R., Huet, K., Toque-Tresonne, I., Cristiano, F., Boninelli, S., Henrichsen, H.H., Nielsen, P.F., Petersen, D.H., Duffy, R., Optimized laser thermal annealing on germanium for high dopant activation and low leakage current, (2014) IEEE Transactions on Electron Devices, 61 (12), art. no. 6945879, pp. 4047-4055, DOI: 10.1109/TED.2014.2364957
Shayesteh, M., O’Connell, D., Gity, F., Murphy-Armando, F., Yu, R., Huet, K., Toque-Tresonne, I., Cristiano, F., Boninelli, S., Henrichsen, H.H., Petersen, D.H., Nielsen, P.F., Duffy, R., Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios, (2014) Proceedings of the International Conference on Ion Implantation Technology, art. no. 6939953, DOI: 10.1109/IIT.2014.6939953
Gity, F., Daly, A., Snyder, B., Peters, F.H., Hayes, J., Colinge, C., Morrison, A.P., Corbett, B., Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding, (2013) Optics Express, 21 (14), pp. 17309-17314, DOI: 10.1364/OE.21.017309
Gity, F., Byun, K.Y., Lee, K.-H., Cherkaoui, K., Hayes, J.M., Morrison, A.P., Colinge, C., Corbett, B., Ge/Si p-n diode fabricated by direct wafer bonding and layer exfoliation, (2012) ECS Transactions, 45 (6), pp. 131-139, DOI: 10.1149/1.3700946
Hayes, J.M., Gity, F., Corbett, B., Morrison, A.P., Modeling the effects of interface traps on passive quenching of a Ge/Si geiger mode avalanche photodiode, (2012) Optical and Quantum Electronics, 44 (3-5), pp. 119-124, DOI: 10.1007/s11082-011-9533-0
Gity, F., Yeol Byun, K., Lee, K.-H., Cherkaoui, K., Hayes, J.M., Morrison, A.P., Colinge, C., Corbett, B., Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation, (2012) Applied Physics Letters, 100 (9), art. no. 092102, DOI: 10.1063/1.3688174
Byun, K.Y., Hayes, J., Gity, F., Corbett, B., Colinge, C., Wafer bonded Ge-Si heterostructure for avalanche photodiode application, (2011) Materials Research Society Symposium Proceedings, 1336, pp. 38-43, DOI: 10.1557/opl.2011.1153
Yang, H., Daunt’, C., Lee, K., Han, W., Gity, F., Corbett, B., Peters, F.H., High-speed and high-power InGaAs/InP photodiode, (2011) Conference Proceedings – International Conference on Indium Phosphide and Related Materials, art. no. 5978307.
Hayes, J.M., Gity, F., Corbett, B., Morrison, A.P., Modeling the effects of interface traps on passive quenching of a Ge/Si Geiger mode avalanche photodiode, (2011) Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD, art. no. 6041115, pp. 205-206, DOI: 10.1109/NUSOD.2011.6041115
Byun, K.Y., Fleming, P., Bennett, N., Gity, F., McNally, P., Morris, M., Ferain, I., Colinge, C., Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation, (2011) Journal of Applied Physics, 109 (12), art. no. 123529, DOI: 10.1063/1.3601355
Gity, F., Hayes, J.M., Corbett, B., Morrison, A.P., Modeling the effects of interface traps on the static and dynamic characteristics of Ge/Si avalanche photodiodes, (2011) IEEE Journal of Quantum Electronics, 47 (6), art. no. 5764937, pp. 849-857, DOI: 10.1109/JQE.2011.2123872
Byun, K.Y., Ferain, I., Hayes, J., Yu, R., Gity, F., Colinge, C., Surface activation using oxygen and nitrogen radical for Ge-Si Avalanche photodiode integration, (2011) Microelectronic Engineering, 88 (4), pp. 522-525, DOI: 10.1016/j.mee.2010.09.005
Yu, R., Byun, K.Y., Gity, F., Hayes, J., Ferain, I., Colinge, C., Corbett, B., Structural and electrical properties of low temperature direct bonded Germanium to Silicon wafer for photodetector applications, (2010) ECS Transactions, 33 (4), pp. 161-168, DOI: 10.1149/1.3483504
Yang, H., Daunt, C.L.L.M., Gity, F., Lee, K., Han, W., Thomas, K., Corbett, B., Peters, F.H., Design and fabrication of uni-traveling-carrier InGaAs photodiodes, (2010) Proceedings of SPIE – The International Society for Optical Engineering, 7847, art. no. 784705, DOI: 10.1117/12.870522
Yang, H., Daunt, C.L.L.M., Gity, F., Lee, K.-H., Han, W., Corbett, B., Peters, F.H., Zero-bias high-speed edge-coupled unitraveling-carrier InGaAs photodiode, (2010) IEEE Photonics Technology Letters, 22 (23), art. no. 5597930, pp. 1747-1749, DOI: 10.1109/LPT.2010.2085041
Morrison, A.P., Hayes, J.M., Gity, F., Corbett, B., Progress towards photon counting between 1 μm and 1.6 μm using silicon with infra-red absorbers, (2010) Proceedings of SPIE – The International Society for Optical Engineering, 7681, art. no. 76810N, DOI: 10.1117/12.851875
Gity, F., Ansari, L., Modeling the effects of DLTs and carrier transport on the turn-on delay, steady-state time and wavelength chirp of SCH-QW lasers, (2009) ICICS 2009 – Conference Proceedings of the 7th International Conference on Information, Communications and Signal Processing, art. no. 5397636, DOI: 10.1109/ICICS.2009.5397636
Ansari, L., Gity, F., Modeling and numerical analysis of static, dynamic and wavelength chirp characteristics of asymmetric multiple quantum well lasers, (2008) Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers, art. no. 4671854, pp. 236-238., DOI: 10.1109/CAOL.2008.4671854
Gity, F., Moghaddasi, M.N., Ansari, L., Modeling and numerical analysis of temperature variations along the cavity and in the heat sink of a single quantum well high power laser diode, (2008) 2008 International Conference on Laser and Fiber-Optical Networks Modeling, LFNM 2008, art. no. 4670360, pp. 26-28, DOI: 10.1109/LFNM.2008.4670360
Gity, F., Naser Moghaddasi, M., Ansari, L., Modelling and numerical analysis of carrier transport effects on the wavelength chirp of SCH-QW lasers, (2007) 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE, art. no. 4410857, pp. 508-510, DOI: 10.1109/AOE.2007.4410857
Gity, F., Mirzakuchaki, S., Zarifkar, A., Ansari, L., Modeling the effects of deep level traps and carrier transport on the L-I characteristic, transient response and wavelength chirp of SCH-QW lasers, (2007) 4th IEEE and IFIP International Conference on Wireless and Optical Communications Networks, WOCN 2007, art. no. 4284168, DOI: 10.1109/WOCN.2007.4284168
Gity, F., Ahmadi, V., Noshiravani, M., Abedi, K., Numerical analysis of void-induced thermal effects on GaAs/AlGaAs high power quantum well laser diodes, (2006) 2006 IEEE GCC Conference, GCC 2006, art. no. 5686220, DOI: 10.1109/IEEEGCC.2006.5686220
Seyedfaraji, A., Ahmadi, V., Noshiravani, M., Gity, F., Numerical analysis of filamentation in conventional double heterostructure and quantum well high-power broad-area laser diodes, (2006) IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, art. no. 4266776, pp. 1019-1023, DOI: 10.1109/SMELEC.2006.380793
Abedi, K., Ahmadi, V., Moravvej-Farshi, M.K., Sheikhi, M.H., Gity, F., Non-physical model of lossy transmission line for circuit simulation of segmented traveling wave electroabsorption modulators, (2006) 2006 IEEE GCC Conference, GCC 2006, art. no. 5686216, DOI: 10.1109/IEEEGCC.2006.5686216
Gity, F., Ahmadi, V., Noshiravani, M., Numerical analysis of void-induced thermal effects on GaAs/AlxGa1-xAs high power single-quantum-well laser diodes, (2006) Solid-State Electronics, 50 (11-12), pp. 1767-1773, DOI: 10.1016/j.sse.2006.09.012
Soroosh, M., Gity, F., Sherafat, A.R., Farahani, K., Razaghi, M., A neural network model for determination of the breakdown voltage for separate absorption and multiplication region avalanche photodiode (SAM-APD), (2005) 2005 International Conference on Wireless and Optical Communications Networks, pp. 173-177.